Self-organized nano-scaled pillar/ripple structures formation on GaAs and Si by using plasma irradiation

This study investigates the formation of self-organized nanoscale structures, specifically pillars and ripples, on Gallium Arsenide (GaAs) and Silicon (Si) surfaces using low-energy Argon (Ar) plasma irradiation with minimal lattice damage. Experimental results show that spiral-like pillars form in the central region due to impurity deposition, while uniform ripples with a stable periodicity of 25–40 nm develop at the edges. Unlike traditional ion-beam methods, the ripple periodicity remains constant over time. The formation mechanism is attributed to a “shadow effect” causing non-uniform impurity deposition. This technique provides a high-efficiency, low-cost solution for large-scale semiconductor surface nanostructuring.