Boost Up Mobility of Solution‐Processed Metal Oxide Thin‐Film Transistors via Confining Structure on Electron Pathways

Novel structure-engineered amorphous oxide semiconductor thin-film transistors using a solution process to overcome the trade-off between high mobility and other parameters (i.e., on/off ratio, sub-threshold voltage swing, threshold voltage, and so on) are proposed. High performance confining structure-engineered AOS TFTs are successfully demonstrated, which utilize a specially designed layer with ultra-high density and high electron mobility.