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June 18, 2026IET conference proceedings.

SiC thyristors with etched junction termination extension

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Authors

SSSigo ScharnholzKKKamil KotraMZMilan Zuvic

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Overview

Fabrication study investigates etched junction termination effects on SiC thyristors, suggesting improvements in design.

Key Points

  • The aim is to fabricate SiC wafers with SiC thyristors and evaluate their characteristics.
  • Fabricated two 5×5 mm² SiC thyristors using TCAD simulations and I-V characteristics analysis.
  • Examined the influence of substrate material anisotropy (4H-SiC) in simulations.
  • Compared the on-state and turn characteristics of both wafers.
  • Differences were observed in the I-V characteristics based on the variations in the etched junction termination extension.
  • Simulation findings highlighted the significance of accounting for substrate anisotropy in design considerations.
  • Variations in epitaxial parameters between the two wafers affected their performance characteristics.

Cite This Study

Scharnholz et al. (2026) studied this question.

synapsesocial.com/papers/6a338b22630953a74978cdb7https://doi.org/10.1049/icp.2026.2188
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