SiC thyristors with etched junction termination extension

This paper presents results of a study aiming at the fabrication of two SiC wafers with simple, SCR type, 5×5 mm2 SiC thyristors. Comparing TCAD simulations and I-V characteristics permitted to evaluate the thickness of the etched junction termination extension. It appeared to be particularly important to take the anisotropy of the substrate material 4H-SiC into account in the simulations. Furthermore, on-state and turn-characteristics characteristics reveal differences between the epitaxial parameters of the two wafers under investigation.