Correlation-driven insulating behaviour in double perovskite ruthenate thin films A ₂ DyRuO ₆ (A = Ba, Sr)

Jay Singh; Sahil Dani

doi:10.1039/d6ma00484a

January 1, 2026Materials AdvancesOpen Access

Correlation-driven insulating behaviour in double perovskite ruthenate thin films A ₂ DyRuO ₆ (A = Ba, Sr)

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Key Points

This research investigates the insulating behavior in double perovskite ruthenate thin films and the underlying electronic mechanisms.
Thin-film double perovskites were prepared using pulsed laser deposition on SrTiO3 substrates.
Ultraviolet photoelectron spectroscopy (UPS) and X-ray absorption spectroscopy (XAS) were used to analyze electronic states.
A correlation-driven gap (Eg ≈ 2.6 eV) was identified, aligning with the characteristics of a Mott insulator system.

Implication

Examines insulating properties in double perovskite thin films, indicating correlation effects in the electronic structure.

Abstract

Thin-film double perovskites (BDRO/SDRO) were grown via PLD on SrTiO 3 substrates. Combined UPS/XAS data map the electronic states, revealing a correlation-driven gap ( E g ≈ 2.6 eV) characteristic of a classic Mott insulator system.

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Cite This Study

Singh et al. (2026) studied this question.

synapsesocial.com/papers/6a338ba9630953a74978d2ad https://doi.org/10.1039/d6ma00484a

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Correlation-driven insulating behaviour in double perovskite ruthenate thin films A ₂ DyRuO ₆ (A = Ba, Sr)

Key Points

Implication

Abstract

Discussion

Cite This Study

Correlation-driven insulating behaviour in double perovskite ruthenate thin films A ₂ DyRuO ₆ (A = Ba, Sr)

Key Points

Implication

Abstract

Discussion

Cite This Study

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