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Abstract The performance and reliability of large-area graphene grown by chemical vapor deposition are often limited by the presence of wrinkles and the transfer-process-induced polymer residue. Here, we report a transfer approach using paraffin as a support layer, whose thermal properties, low chemical reactivity and non-covalent affinity to graphene enable transfer of wrinkle-reduced and clean large-area graphene. The paraffin-transferred graphene has smooth morphology and high electrical reliability with uniform sheet resistance with ~1% deviation over a centimeter-scale area. Electronic devices fabricated on such smooth graphene exhibit electrical performance approaching that of intrinsic graphene with small Dirac points and high carrier mobility (hole mobility = 14,215 cm 2 V −1 s −1 ; electron mobility = 7438 cm 2 V −1 s −1 ), without the need of further annealing treatment. The paraffin-enabled transfer process could open realms for the development of high-performance ubiquitous electronics based on large-area two-dimensional materials.
Leong et al. (Wed,) studied this question.