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In this letter we present a high performance -Ga 2 O 3 solar-blind photodetector (SBPD) with asymmetric Schottky electrodes. The -Ga 2 O 3 films were heteroepitaxially grown on c -plane sapphire by metal-organic chemical vapor deposition (MOCVD). The SBPDs were fabricated in the form of lateral interdigitated Schottky electrodes composed of a Pt/Ti/Au metal stack and a Ti/Au metal stack. The SBPD shows a rectification ratio of ~ 10 2 with low dark current of 25 pA at V = 6 V. A high photo-to-dark-current ratio of 5. 7 10^{4} under 254 nm light illumination was measured. Furthermore, the SBPD exhibits an ultrahigh detectivity and external quantum efficiency of 4. 2 10^{14} Jones and 4. 1 \, \, \, \, 10^{4} %, respectively. Most importantly, the SBPD possesses an ultrahigh responsivity of 84 A/W with a fast response speed of 100 ms, suggesting the promise of -Ga 2 O 3 in the future photodetector applications.
Qin et al. (Thu,) studied this question.