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Anisotropy of electrical and optical properties in β-Ga2O3 single crystals has been investigated at room temperature. The conductivity and mobility of the degenerate sample along the direction of b and c axes are 38 Ω−1 cm−1, 46 cm2 V−1 s−1, and 2.2 Ω−1 cm−1, 2.6 cm2 V−1 s−1, respectively. The absorption edges of the insulating sample for light polarized E//b and E//c were 4.79 and 4.52 eV, respectively. The rate of the band gap widening with increasing carrier concentration was much larger for E//b than E//c. The origin of these properties are discussed by considering the crystal and electronic structure of β-Ga2O3.
Ueda et al. (1997) studied this question.