Demonstrates high-performance diamond-based photodetector, indicating potential for use in extreme conditions.
To realize all‐carbon diamond‐based photodetectors for high‐temperature sensing, an integrated diamond/graphite deep‐ultraviolet (DUV) detector is demonstrated and fabricated via femtosecond (fs) laser‐induced graphitization. The influence of the graphitized transition layer on the diamond surface is investigated, and the carrier transport mechanism across the interface under high‐temperature conditions is analyzed. At room‐temperature (RT), the integrated diamond/graphite detector exhibits robust performance: a photo‐to‐dark current ratio (PDCR) of 7 × 10 5 at 70 V bias, a responsivity of 110 A/W at 80 V along with a detectivity of 5.8 × 10 14 Jones. Notably, the device displays fast temporal dynamics, featuring decay time constants of 28 µs ( τ 1 ) and 2.5 ms ( τ 2 ). In addition, the device achieves a peak responsivity of 440 A/W at 570 K. Our results offer a feasible route to fabricating the high‐performance diamond‐based DUV photodetectors for operation in high‐temperature and harsh environments.
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Zhang et al. (2026) studied this question.
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