Shows enhanced electrical and photo-response in graphene/beta-InSe heterostructures, indicating potential for advanced electronics.
Sliding ferroelectricity in 2D β-InSe has been confirmed, but its intrinsic electrical and photo-response under ferroelectric polarization remain unclear. Here, graphene/β-InSe/graphene heterostructures were fabricated using graphene electrodes, avoiding the destruction of InSe intrinsic ferroelectric polarization from interface defects in conventional metal contacts. Electrical measurements show robust in-plane and out-of-plane ferroelectric polarizations with synergistic regulation, ultralow switching voltage (<6 V), and a four-order resistance window. The device exhibits high specific detectivity (∼1011 Jones) across the visible range, with photo-response effectively modulated by polarizations, unaffected by photocarriers. This system holds great promise for low-power nonvolatile electronics and intelligent optoelectronics.
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Pan et al. (2026) studied this question.
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