Interfacial engineering of nitrogen-doped silicon carbide for reliable hybrid bonding in advanced semiconductor integration

Haibo Yang; Yihao Meng; L D Zhang; Fei Ding; Yu Zhang; Yi Yang; Qiushi Kang; Chuan Chen; Renxi Jin; Liqiang Cao; Qidong Wang

doi:10.1039/d6tc00900j

January 1, 2026Journal of Materials Chemistry C

Interfacial engineering of nitrogen-doped silicon carbide for reliable hybrid bonding in advanced semiconductor integration

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Key Points

This review aims to explore the engineering strategies that enhance the performance of nitrogen-doped silicon carbide in hybrid bonding applications.
Examines various fabrication methods for SiCN dielectric films.
Analyzes bonding mechanisms involved in hybrid bonding.
Discusses structure-property relationships influencing bonding performance.
Identifies key engineering strategies that improve bonding reliability.
Highlights the importance of the structure-property relationship in achieving optimal bonding.
Evaluates different fabrication methods and their impact on the performance of hybrid bonding.

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Implication

Review summarizes engineering strategies for SiCN dielectric films used in hybrid bonding interconnects, highlighting implications for semiconductor integration.

Abstract

This review summarizes engineering strategies for SiCN dielectric films in hybrid bonding interconnects, covering fabrication methods, bonding mechanisms, and the structure–property relationships that determine bonding performance.

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Cite This Study

Yang et al. (2026) studied this question.

synapsesocial.com/papers/6a36324adb0793dc1a538e61 https://doi.org/10.1039/d6tc00900j

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Interfacial engineering of nitrogen-doped silicon carbide for reliable hybrid bonding in advanced semiconductor integration

Key Points

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Implication

Abstract

Discussion

Cite This Study

Interfacial engineering of nitrogen-doped silicon carbide for reliable hybrid bonding in advanced semiconductor integration

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

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