4K Self-Rectifying Resistive Memory Crossbar Array for Reliable Pattern Recognition

Here, we demonstrate an interface-controlled, self-rectifying resistive switching memory integrated in a 4K (64 × 64) crossbar array (CA). A simple Ru/HfAlO x /TiN stack composed of fabrication-friendly materials enables both nonvolatile resistive switching and polarity-dependent rectification. The interface-controlled operation suppresses the stochastic variability typically observed in conventional resistive switching memories and removes the need for electroforming, which is advantageous for mass production. In the 4K crossbar array, we achieve 100% functional yield without operational failure and experimentally verify analogue vector–matrix multiplication (VMM). The same interface-controlled switching yields analogue-like conductance updates with linear and symmetric modulation, and we present inference simulation results based on the measured characteristics. Finally, current-conduction fitting and drive-level capacitance profiling (DLCP), together with atomistic numerical simulations, elucidate a switching mechanism governed by the motion of internal mobile charges at the interfaces.