Anisotropic multiband magnetotransport in LaAg 2 Ge 2 thin films

ThCr₂Si₂-type intermetallics are layered conductors in which crystallographic anisotropy and multiband electronic states often give rise to characteristic magnetotransport phenomena. Here we report the molecular-beam epitaxy growth of LaAg₂Ge₂ thin films on MgO(001) and their magnetotransport properties. Hall measurements are well described by an effective two-carrier model with a high-mobility minority electron coexisting with a low-mobility majority hole. The observed positive magnetoresistance of 22.5% at 9 T exceeds the prediction of the isotropic two-band Drude model by more than an order of magnitude, indicating an anisotropic multisheet Fermi-surface origin. Consistently, angle-dependent magnetoresistance exhibits a dominant twofold anisotropy and additional reproducible dip/peak features at characteristic tilt angles that are nearly independent of field and temperature. These results extend our understanding of the anisotropic electronic transport in thin-film germanides within the ThCr₂Si₂ family.