Binding Energies of Amorphous CN and SiCN Films on X-Ray Photoelectron Spectroscopy

SiCN and CN films were prepared by nitrogen ion-assisted pulsed-laser deposition. The dependence of silicon addition in CN film on the chemical bonds between carbon and nitrogen was examined. The formation of the sp 3 bond between carbon and nitrogen is promoted by the addition of silicon. The binding energies in X-ray photoelectron spectra have been identified, and the bonding states of 286.1 eV in C1s and 400.0 eV in N1s are contributions of the sp 2 bond between carbon and nitrogen. Other subpeaks of 287.7 eV in C1s and 398.3 eV in N1s are due to an sp 3 bond between carbon and nitrogen.