Proton irradiation-induced dark current and RTS on InGaAs infrared focal plane array

In this study, the proton-induced increase in dark current and the production of random telegraph signal (RTS) in InGaAs infrared focal plane array (IR FPA) are investigated. We note that InGaAs FPA has a high sensitivity to proton-induced displacement damage. After 1 × 1011 p+/cm2 proton irradiation, the dark current distribution with a Gaussian shape and a universal damage factor (UDF) of 1136 e-/s/µm3/(TeV/g) is obtained. The statistical distribution results of the RTS at different proton fluences, integration time and temperatures are also summarized. In addition, a special class of spine-RTS is discussed with respect to its characteristics and causes. The annealing trend of FPA dark current and the RTS evolution of several pixels indicate complex changes in cluster defects.