Mitigating Recombination Losses in CZTSSe Solar Cells via Interface Engineering: A Comprehensive Review

As an emerging photovoltaic technology, Cu2ZnSn(S,Se)4 (CZTSSe) thin-film solar cells are regarded as a viable, cost-effective alternative to satisfy future demand for green energy. This promise is attributed to their tunable bandgap (1.0~1.5 eV), high absorption coefficient (>104 cm−1), and environmentally friendly composition. Currently, the record power conversion efficiency (PCE) of CZTSSe devices has reached 16.6%, approaching commercial levels. However, this value remains significantly lower than its theoretical limit of 32.8% and the 23.6% achieved by the homologous CIGS technology, indicating immense potential for performance enhancement. The severe open-circuit voltage deficit (Eg/q-Voc) remains a critical factor preventing CZTSSe solar cells from reaching their expected efficiency. This issue is primarily associated with band misalignment and deep-level defects at the interfaces. At present, interface engineering has been demonstrated to be an effective strategy to significantly improve the performance of CZTSSe thin-film solar cells. Herein, we review the development process of CZTSSe photovoltaics, systematically discuss existing interface-related issues and comprehensively summarize recent strategies in interface engineering. Finally, to further elucidate the intrinsic mechanisms and facilitate the development of high-efficiency devices, future research directions and perspectives regarding interface engineering are proposed.