High-index silicon surfaces provide anisotropic step networks, reconstruction states, and facet-adjacent geometries that can modify the first stages of III–V heteroepitaxy. This critical review examines GaAs/AlGaAs growth on Si(hhl) surfaces, with emphasis on the coupled roles of substrate orientation, surface preparation, first-monolayer initiation, and molecular beam epitaxy kinetics. The central viewpoint is that high-index Si can act as an active interfacial template: its anisotropy can bias early nucleation, relaxation, and faceting pathways before any intentional lithographic patterning is introduced. The discussion is anchored in two recent GaAs/Si studies. The first is a matched-condition benchmark comparing Si(001), Si(113), Si(111), and Si(331) under Ga-first and As-first initiation. The second is a Si(331) case study in which Ga pre-exposure followed by low-rate GaAs nucleation yields laterally ordered nanocorrugation/faceting and measurable in-plane optical anisotropy under the explored conditions. Surface-science precedents from adsorbate-induced reconstructions provide additional context for treating the first atomic layer as a meaningful growth variable. These studies point to a broader opportunity: using high-index Si(hhl) surfaces to link interface chemistry, anisotropic morphology, structural relaxation, and optical response within a common framework for GaAs/Si integration.
E. Cruz‐Hernández (Mon,) studied this question.
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