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This research investigates how silicon doping and thermal annealing influence the phase transition of hexagonal boron nitride.

Silicon doping assisted phase transition of h -BN to c -BN via thermal annealing

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Randomized trial demonstrates phase transition from hexagonal to cubic BN in Si-doped films, indicating enhanced properties for future applications.

This research investigates how silicon doping and thermal annealing influence the phase transition of hexagonal boron nitride.
Silicon-doped h-BN films were grown on sapphire substrates and subjected to high-temperature thermal annealing above 1000 °C.
Phase transitions were analyzed using spectral analysis and x-ray photoelectron spectroscopy, alongside secondary ion mass spectrometry.
First-principles calculations were performed to understand the energy barriers associated with the phase transformation.
Thermal annealing induced a phase transition from hexagonal to cubic BN with intermediate explosive BN observed.
Interdiffusion of Si and Al was detected, impacting the phase transition at high temperatures.
First-principles calculations showed that silicon substitution reduces the energy barrier for the sp2 to sp3 transformation.

Huang et al. (2026) studied this question.

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View Full Paper

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Authors

Randomized trial demonstrates phase transition from hexagonal to cubic BN in Si-doped films, indicating enhanced properties for future applications.

This research investigates how silicon doping and thermal annealing influence the phase transition of hexagonal boron nitride.
Silicon-doped h-BN films were grown on sapphire substrates and subjected to high-temperature thermal annealing above 1000 °C.
Phase transitions were analyzed using spectral analysis and x-ray photoelectron spectroscopy, alongside secondary ion mass spectrometry.
First-principles calculations were performed to understand the energy barriers associated with the phase transformation.
Thermal annealing induced a phase transition from hexagonal to cubic BN with intermediate explosive BN observed.
Interdiffusion of Si and Al was detected, impacting the phase transition at high temperatures.
First-principles calculations showed that silicon substitution reduces the energy barrier for the sp2 to sp3 transformation.

Huang et al. (2026) studied this question.

View Full Paper

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