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Demonstrates enhanced magnetic moment in insulating CoFe2O4, suggesting improvements for electronics.
Strong enhancement of magnetization is highly desirable for increasing device efficiency, improving temperature stability, enhancing sensitivity, and enabling device miniaturization. Here, we demonstrate a 2.6−4.7 times higher room temperature ferrimagnetic moment (730−770 emu cc −1 ) compared to 170−260 emu cc −1 in as‐grown CoFe 2 O 4 films, achieved by site‐specifically intercalating hydrogen ions near the Fe 3+ in tetrahedral sites. While the spin moments of the Fe 3 + at octahedral and tetrahedral sites cancel each other out in as‐grown films, X‐ray spectroscopy of hydrogenated films reveals that both Fe 3+ and Co 2+ at octahedral sites can contribute to the enhanced total magnetic moment. This robust enhancement in insulating CoFe 2 O 4 , exhibiting high reproducibility over ≈10 cycles and long‐term stability over ≈10 d, suggests that hydrogenic‐ferrimagnetic coupling holds great promise for ultralow power electronics operating at high frequencies.
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Park et al. (2026) studied this question.
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