Advances in Homoepitaxial Mosaic Single-Crystal Diamond: Interface Stress Regulation

Single-crystal diamond is regarded as one of the most promising semiconductor materials for next-generation high-power electronic devices, quantum technologies, and extreme environmental applications, owing to its ultra-wide bandgap, exceptionally high carrier mobility, ultra-high breakdown electric field, and excellent thermal conductivity. However, the lateral dimensions of both natural and synthetic single-crystal diamond are limited, which severely restricts their large-scale industrial application. Mosaic growth, in which multiple small single-crystal seeds are laterally arranged and fused at the interfaces through homoepitaxial growth, offers a promising approach to overcoming the size limitation of seed crystals and producing inch-scale single-crystal wafers. This review systematically covers the entire mosaic growth process, including seed crystal preparation, geometric design, growth parameter optimization, and innovative processing methods. Particular emphasis is placed on the mechanisms of interfacial stress generation, along with characterization techniques and stress control strategies. Finally, future perspectives on the fabrication of large-size, low-stress single-crystal diamond wafers are outlined.