Nonvolatile Photoelectric Memory Induced by Interfacial Charge at a Ferroelectric PZT‐Gated Black Phosphorus Transistor

Ferroelectric‐field‐effect‐transistor (FeFET) memory, characterized by its nonvolatile, nondestructive readout operation and low power consumption, has attracted tremendous attention in the development of next‐generation random‐access memory. However, the electrical reading processes in conventional FeFETs may attenuate the ferroelectric (FE) polarization and lead to readout crosstalk. A photoelectric‐type FeFET memory with alternative readout through 2D black phosphorus (BP)/lead zirconate titanate (PZT) heterostructures is developed. Based on charge‐mediated electric‐field control, a unique polarization‐dependent photoresponse is observed, resulting in both positive photoconductivity (PPC) and negative photoconductivity (NPC) in a single device element via FE gating. This enables a nonvolatile photoelectric memory working in a novel “electrical writing‐optical reading” process mode. Furthermore, the device exhibits a reliable data retention (over 3.6 × 10 3 s) and fatigue (exceeding 500 cycles) performance with extremely low energy consumption (driving voltage <10 mV). The demonstrated BP/PZT heterostructure memory devices show a pathway to high‐performance photoelectric storage devices as light‐activated logic gates for on‐chip optical communications.