On the viability of a graphene nanogap junction

In this working paper, the viability of the construction of a nanogap between two graphene sheets has been researched. Several methods of electrode-fabrication have been analyzed. Two techniques have been identified as viable candidates, namely the MCBJ and the reactive ion-etching method. The results of Atomic Force Microscope analysis for both methods showed graphene reaching all the way up to the edge of the substrate. The MCBJ-method was further researched by performing the breaking of a Si/SiO2-wafer, under different ambient conditions. These results point to the possibility of overhanging patches of graphene contacting the underlying Si wafer, giving characteristic semiconductor IV-curves