Aging-Enhanced High-Performance Zinc Tin Oxide Transistors and Exploration in Illumination Interface Stability

In this work, a post-annealing rapid cooling and aging treatment process is innovatively proposed to build high-performance zinc tin oxide (ZTO) thin-film transistors. The relaxation effect on the abundant oversaturated oxygen vacancy deep-level traps contributes to the shallow donor formation during the aging period. The TFTs aged in an air environment for 10 days possess significantly improved electrical performance, including a clearly increased on/off current ratio of 7 × 106 from 2 × 104 and a markedly increased saturation mobility of 5.9 from 2.2 cm2·V−1·s−1, verifying the facile method to improve the electrical property of polycrystalline TFTs, and the method has been investigated using the grain boundary defect relaxation model and energy band theory. It is worth mentioning that the TFTs aged under vacuum conditions realized more effective regulation and control on off-state current and demonstrated a wider aging time window. The distinctive illumination interface stability was studied in depth using a charge trapping model and electron–hole pair model, which embody the potential application in photoelectric detectors.