High-performance dinaphtho-thieno-thiophene single crystal field-effect transistors

We fabricated high-performance single crystal organic field-effect transistors (SC-OFETs) based on dinaphtho2,3-b:2′,3′-fthieno3,2-b-thiophene (DNTT). Among various device geometries and contact types, best performance is obtained for a lamination-type SC-OFET composed of a Cytop-treated SiO2 gate dielectric and top-contact gold/tetrathiafulvalene-tetracyanoquinodimethane electrodes, which results in hysteresis-free device characteristics with optimum mobility of 8.3 cm2/V s and an on/off ratio of 108. The achieved performance is promising for use of the air-stable DNTT in future studies of intrinsic properties of molecular crystals.