We report the demonstration of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition. InAs/GaAs quantum-dot-in-nanowires (QD-in-NWs) with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the form of InAs/GaAs heterostructures and identified by structural analyses using scanning transmission electron microscopy and photoluminescence characterization. Sharp excitonic emission peaks at 10 K from single QD-in-NWs with the narrowest exciton linewidth of 87 μeV are observed. Light emission from the single QD-in-NW shows photon antibunching, along with biexciton-exciton cascaded emission process, which evidences single photon emission from high-quality QD-in-NWs.
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Tatebayashi et al. (2012) studied this question.
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