A method for thin-film fabrication employing high oxygen-pressure processing (HOPP) was developed. With this method, the highly (100) oriented Pb(ZrxTi1−x)O3 (PZT) thin film was fabricated at temperature as low as 400°C. HOPP is compatible to the ferroelectric PZT film integration with a readout integrated circuit. The sol-gel-derived PZT 50∕50 thin film showed a well-saturated hysteresis loop at an applied electric field of 367kV∕cm with Pr and Ec of 45μC∕cm2 and 121kV∕cm, respectively. Large electric leakage was attributed to remnant organic components, which was demonstrated by sputtered organic-free PZT films. The optimized Pr and Ec are of 26μC∕cm2 and 93kV∕cm under an applied electric field of 400kV∕cm.
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Zhang et al. (2005) studied this question.
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