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Exploiting piezoelectric effect to engineer material interface has been confirmed as a promising way to optimize the performance of optoelectronic devices. Here, by using this effect, we have greatly improved the photoresponse of the fabricated ZnO/Au Schottky junction based self-powered UV detector. A 440% augment of photocurrent, together with 5× increased sensitivity, was obtained when the device was subjected to a 0.580% tensile strain. The enhancement can be attributed to the facility separation and extraction of photoexcites due to the formation of the stronger and expanding built-in field, which is a result of charge redistribution induced by piezoelectric polarization at the ZnO/Au interface. This study not only can strengthen the understanding of piezoelectric effects on energy devices but also can be extended to boost performances of optoelectronic devices made of piezoelectric semiconductor materials.
Lu et al. (Mon,) studied this question.