2D Insulator–Metal Transition in Aerosol‐Jet‐Printed Electrolyte‐Gated Indium Oxide Thin Film Transistors

The authors report electronic transport characterization and 2D insulator–metal transition in aerosol-jet-printed, electrolyte-gated In2O3 thin film transistors (TFTs) at electron densities of 1014 cm−2 and mobility of 10 cm2 V−1 s−1, demonstrating the potential for fundamental transport physics as well as maximizing ON current in solution-processed TFTs. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.