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The objective is to introduce a new 4-Mb MRAM with enhanced switching capabilities and robust performance.

A 4-Mb toggle MRAM based on a novel bit and switching method

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The objective is to introduce a new 4-Mb MRAM with enhanced switching capabilities and robust performance.
Designed in a five level metal, 0.18-µm complementary metal-oxide-semiconductor process
Bit cell size measures 1.55 µm²
Utilized a balanced synthetic antiferromagnetic free layer with a phased write pulse sequence
Demonstrated robust switching performance with immunity from half-select disturbs
Improved operational performance compared to conventional MRAM

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Randomized trial demonstrates improved operational performance in MRAM, indicating potential advancements in memory technology.

Engel et al. (2005) studied this question.

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