What question did this study set out to answer?

The objective is to introduce a new 4-Mb MRAM with enhanced switching capabilities and robust performance.

January 1, 2005IEEE Transactions on Magnetics480 citations

A 4-Mb toggle MRAM based on a novel bit and switching method

BEB. N. Engel JÅJohan Åkerman BBB. Butcher

Key Points

The objective is to introduce a new 4-Mb MRAM with enhanced switching capabilities and robust performance.
Designed in a five level metal, 0.18-µm complementary metal-oxide-semiconductor process
Bit cell size measures 1.55 µm²
Utilized a balanced synthetic antiferromagnetic free layer with a phased write pulse sequence
Demonstrated robust switching performance with immunity from half-select disturbs
Improved operational performance compared to conventional MRAM

Abstract

A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-/spl mu/m complementary metal-oxide-semiconductor process with a bit cell size of 1.55 /spl mu/m/sup 2/. The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presented.

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