Width‐Tunable Graphene Nanoribbons on a SiC Substrate with a Controlled Step Height

An approach to fabricate large-scale graphene nanoribbons (GNRs) with tunable ribbon widths is presented. Regular steps with variable heights from 1 to 100 nm can be prepared on a SiC substrate by a low-pressure etching process. Graphene can be epitaxially grown only on the side walls of the steps, thereby leading to GNRs with controllable widths. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.