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We evaluate quantum corrections to conductivity in an electrically gated thin film of a three-dimensional topological insulator. We derive approximate analytical expressions for the low-field magnetoresistance as a function of bulk doping and bulk-surface tunneling rate. Our results reveal parameter regimes for both weak localization and weak antilocalization, and include diffusive Weyl semimetals as a special case.
Garate et al. (Mon,) studied this question.
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