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Abstract Conventional resonant-tunneling-diode (RTD) terahertz (THz) oscillators with rectangular cavity resonators typically exhibit low output power due to resistive losses in the resonator and surrounding RTD structure. To address this, we improved the RTD layer and device structure to reduce these losses and increase output power. The devices were successfully fabricated with these improvements, achieving the highest output power of 1.14 mW at 0.650 THz. The frequencies and output powers of fabricated devices agree well with theoretical predictions. To the best of our knowledge, these are the first single electronic oscillators to exceed 1 mW in the 0.6–0.7 THz range.
Tanaka et al. (Sat,) studied this question.