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This letter demonstrates vertical Ga 2 O 3 Schottky barrier diodes (SBDs) with a novel edge termination, the small-angle beveled field plate (SABFP), fabricated on thinned G₂O₃ substrates. Non-punch-though design is used for the drift region with a donor concentration of 3 3. 5 10 ^{16} cm −3, rendering a device differential ON-resistance of 2~m ~ cm 2. A new wet-etch technique is developed by using a bi-layer mask, which consists of spin-on-glass (SOG) and plasma-enhanced chemical vapor deposited (PECVD) SiO 2, to fabricate a very small bevel angle (∼ 1°) in the mesa and field plates. This SABFP structure facilitates the electric field spreading at device edges, rendering a breakdown voltage of 1100 V, a peak electric field of 3. 5 MV/cm in Ga 2 O 3 at the Schottky contact edge, and an averaged electric field over 3. 4 MV/cm underneath the contact. Our device demonstrates a Baliga’s figure of merit of 0. 6 GW/cm 2, which is among the highest in all reported Ga 2 O 3 power devices and comparable to the state-of-the-art GaN SBDs. These results show the great potential of Ga 2 O 3 SBDs for future power applications.
Allen et al. (Mon,) studied this question.