Schottky Barrier Rectifier Based on (100) β -Ga₂O₃ and its DC and AC Characteristics

A Schottky barrier rectifier was fabricated with a (100)-oriented <tex-math notation="LaTeX">β </tex-math> -Ga 2 O 3 substrate grown by the edge-defined film-fed method. The Sn-doped <tex-math notation="LaTeX">β </tex-math> -Ga 2 O 3 substrate had an effective donor concentration of approximately <tex-math notation="LaTeX">2× 10¹⁷ </tex-math> cm −3 . High performance parameters were obtained, such as a high forward current (421 A/cm 2 at 2 V), low ON-resistance (2.9 <tex-math notation="LaTeX">mΩ · </tex-math> cm 2 ), and short reverse recovery time (20 ns). Furthermore, the dynamic behavior of the device is characterized through test on the half-wave rectification of ac voltages at different frequency. The diode worked well at 100 kHz. At the end of the letter, we discuss how Ga 2 O 3 Schottky rectifier can operate at high frequency.