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In the van der Waals antiferromagnetic semiconductor CrSBr, magnetoresistance behavior differs drastically between low- and high-carrier density regimes, governed respectively by magnetically driven carrier concentration modulation and mobility modulation. Novelty: ClaimNovelty.NOVEL_FINDING. Consensus alignment: ConsensusAlignment.NEUTRAL.

Large Magnetoresistance in an Electrically Tunable van der Waals Antiferromagnet

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