Large Magnetoresistance in an Electrically Tunable van der Waals Antiferromagnet

The interplay between magnetic order and electronic band structure in antiferromagnets has garnered increasing interest due to its potential for spintronic applications. While magnetic transitions have been shown to induce substantial band structure modifications in optical measurements, their influence on electronic transport remains poorly understood. In this work, we investigate the transport properties of CrSBr, a van der Waals antiferromagnetic semiconductor, over a wide range of carrier densities modulated by gate voltage. We observe a drastic contrast in magnetoresistance behavior between the low- and high-carrier density regimes. Through a combination of experiment and modeling, we identify magnetically driven carrier concentration modulation and mobility modulation as the dominant mechanisms governing magnetoresistance in the respective regimes. These findings advance the understanding of magnetoelectric transport in antiferromagnets and suggest promising routes for energy-efficient spintronic technologies in memory, logic, and sensing applications.