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We report on a simple passivation strategy to improve the device performance of a near infrared (NIR) photodetector. Optoelectronic analysis reveals that after ultrathin AlO x passivation, the device exhibits an obvious increase in on/off ratio. What is more, the response speed of the device was improved by more than 100 times, from 48 μs to 380 ns.
Luo et al. (Thu,) studied this question.
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