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October 1, 1954Physical Review318 citations

Mobility of Impurity Ions in Germanium and Silicon

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CFC. S. FullerJSJ. C. Severiens

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Abstract

Lithium has been shown to migrate as a singly-charged positive ion in single crystals of both Ge and Si in temperature ranges of 150-600^ and 360-860^, respectively. The mobility of the Li^+ in crystalline Ge and Si has been measured as a function of temperature. Through the use of the Einstein relation between diffusion constant and mobility, values of the diffusion constants in cm^2/sec of Li^+ in Ge and Si are obtained as follows: D=2510^-4exp ({-11800) RT} for Ge and D=2310^-4exp ({-15200) RT} for Si, in satisfactory agreement with previously published results on the thermal diffusion of Li^+. A curious reversion of conductivity type of solid solutions of Li in Ge is discussed. Copper has likewise been found to move as a positive ion in germanium in the temperature range 800^-900^ leading to diffusivities in agreement with previously published results.

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Fuller et al. (1954) studied this question.

synapsesocial.com/papers/6a610b3a45f10c85e837b7aehttps://doi.org/10.1103/physrev.96.21
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