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January 14, 2009IEICE technical report. Electron devices

High power AlGaN/GaN HFETs on 4 inch Si substrates

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Authors

NINariaki IkedaYaskawa Electric (Japan)SKSyuusuke KayaJLJiang LiChina Academy of Building Research

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Ikeda et al. (2009) studied this question.

synapsesocial.com/papers/6a611f967bdfcb316faabe16https://doi.org/10.1002/pssc.200880759
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