Key points are not available for this paper at this time.
Shortwave infrared (SWIR) light emitters and detectors are crucial in numerous applications. Conventionally, SWIR devices rely on epitaxially grown narrow bandgap semiconductors, such as InGaAs, which are expensive to fabricate and difficult to integrate with silicon complementary metal-oxide-semiconductors (CMOS). Colloidal quantum dots (CQDs) have emerged as low-cost alternatives to epitaxially grown semiconductors, offering integration with CMOS through solution-processing methods. However, the predominant SWIR-active CQD systems rely on heavy-metal-containing compositions (PbS and HgTe), hindering the adoption of CQD SWIR technology. InAs CQDs are promising substitutes in SWIR applications. However, synthesizing SWIR-active InAs CQDs is challenging, often constraining them to the visible or near-infrared regions. To achieve SWIR bandgaps, large InAs CQDs are typically required; such CQDs are prone to having surface traps that quench photogenerated charge carriers, adversely affecting device performance. Here, we report a two-step synthesis of surface-passivated SWIR-active InAs/ZnSe core/shell colloidal nanorod quantum dots (CNQDs). These surface-passivated CNQDs are highly emissive and tunable over the entire technologically important region (1200–1800 nm) of the SWIR window with photoluminescence quantum yields as high as 60%. Using these SWIR-active InAs/ZnSe CNQDs, we demonstrated an SWIR-active InAs CQD photodetector, achieving a record high external quantum efficiency of ∼15% at ∼1450 nm and a low dark current of ∼10 –2 mA/cm 2 .
Sheikh et al. (Wed,) studied this question.