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ABSTRACT The development of low‐cost, high‐performance, uncooled broadband photodetectors (PDs) is crucial for optical communication and imaging. However, achieving deep‐ultraviolet (DUV) to extended short‐wave infrared (eSWIR) detection in a single device remains challenging. Herein, a novel ultrabroadband Type‐II AgBiS 2 quantum dots (QDs)/In 0.75 Ga 0.25 As heterojunction is used as the photosensitive layer, significantly enhancing charge separation and transport, suppressing interface carrier recombination, and improving stability. Compared with the pristine AgBiS 2 QDs PDs, the self‐powered PDs based on this heterojunction exhibit a response from 0.3 to 2.3 µm, with responsivity of 1.66 A/W and detectivity of 2.64 × 10 12 Jones. They also show remarkable long‐term and operational stability, retaining 94.1% response after 20000 h storage and 96.7% after 10000 ON/OFF cycles. This PD enables broadband imaging without cryogenic cooling, showing great promise for practical applications. This work provides a new strategy for self‐powered ultrabroadband PDs (DUV‐eSWIR), opening up new opportunities for future optoelectronic systems.
Li et al. (Tue,) studied this question.