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The paper presents results on the effect of ion implantation (N+, Ne+ and Ar+) and annealing of silicon doped with B, P, or Sb on the increase of its permittivity. The results indicate that the permittivity increase is caused by jumping recharging between defects. The influence of various kinds of defects (divacancies, interstitial defects Si-P3 and Si-B2) on permittivity and tg δ of implanted silicon has been discussed.
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Żukowski et al. (1997) studied this question.
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