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A description is given of the use of silicon barrier layer and lithium drifted detectors for the measurement of X-rays generated at 10 to 30 kv. Defined X-ray beams are totally absorbed in silicon, and by comparing the charge so produced with the beam energy as measured with a total absorption calorimeter, a value of 3.69+or-0.02 ev per electron-hole pair in silicon is derived. The saturation characteristics of the devices are discussed together with their merits for X-ray measurement.
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Greening et al. (1969) studied this question.
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