Evidence for multiple atomic structure for the {1010} inversion domain boundaries in GaN layers

Atomic structure investigation has been carried out on {101̄0} inversion domain boundaries in GaN layers grown by molecular beam epitaxy. A method based on the comparison of the stacking sequences of GaN on both sides of the boundary is proposed in order to distinguish between different models. Experimental evidence is shown for two atomic configurations of the boundary plane. Depending probably on the growth conditions, the Holt model, which has been theoretically characterized as highly energetic, can also exist for the {101̄0} inversion domain boundaries in GaN epitaxial layers.