Thin-film corundum-structured gallium oxide (α-Ga 2 O 3 ) Schottky barrier diodes (SBDs) were fabricated by growing α-Ga 2 O 3 layers on sapphire substrates by the safe, low-cost, and energy-saving MIST EPITAXY ® technique, followed by lifting off the α-Ga 2 O 3 layers from the substrates. The SBDs exhibited on-resistance and breakdown voltage of 0.1 mΩ·cm 2 and 531 V (SBD1) or 0.4 mΩ·cm 2 and 855 V (SBD2), respectively. These results will encourage the future evolution of low-cost and high-performance SBDs with α-Ga 2 O 3 .
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Oda et al. (2016) studied this question.
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