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Scanning photocurrent microscopy (SPCM) is used in semiconductor nanowire devices to establish quantitative potential profiles correlated with nonuniformities in electrical resistivity. Surface doping leads to a nonuniform axial photocurrent (a). Surface etching improves the uniformity of the local photocurrent (b) and reduces the radial and axial carrier concentration gradients (c, blue curve after etching).
Allen et al. (Mon,) studied this question.