Radiation tolerance of AlGaN/GaN high-electron mobility transistors (HEMTs) is studied with 2-MeV protons, up to a fluence of 6×10 14 H + /cm 2 (about 200 times of typical Si MOSFET rating). The increase in dynamic ON-resistance (R ONDYN ) after radiation is observed to be much more severe than that of static ON-resistance. Radiation-induced donorlike traps located near the two-dimensional electron gas trap electrons, which is responsible for the phenomenon. Compared with the devices passivated by conventional plasma-enhanced chemical vapor deposition (PECVD) SiN, GaN HEMTs with 10 nm of in situ SiN before the PECVD SiN step demonstrate much less increase in R ONDYN from 2300% to only 300%. The in situ SiN is believed to reduce the process damage by PECVD, improving radiation tolerance.
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Koehler et al. (2016) studied this question.
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