Low‐Temperature Growth of Well‐Aligned β‐Ga₂O₃ Nanowires from a Single‐Source Organometallic Precursor

The growth of well‐aligned Ga 2 O 3 nanowires at low temperature (550 °C) is reported (see Figure). A single‐source precursor of gallium acetylacetonate is employed as the reactant for the growth of the nanowires by a vapor–liquid–solid route. Structural characterization by X‐ray diffraction and transmission electron microscopy reveals that the nanowires are preferentially oriented in the (2?01) direction.