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InAs quantum dots (QDs) with a high density of 9×1010 cm−2 are formed on InAlGaAs layer/InP (311)B substrates. Lasers having five-period stacked InAs QD layers are operated in the ground state (λ≈1.6 μm) at room temperature, and the maximal modal gain of the ground state is measured to be 20 cm−1. We obtained a threshold current density of 380 A/cm2 at room temperature, and observed the temperature-insensitive threshold current at temperatures from 77 to 220 K.
Saito et al. (Mon,) studied this question.