6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC

In this work, we show that the -Ga 2 O 3 Schottky Barrier Diode (SBD) can perform beyond the 1-D unipolar limit of the SiC and GaN by employing a deep trench with filled thick SiO 2 layer structure to enhance the breakdown voltage (BV). By doing so, BV and specific on- resistance (R ₎₍, {sp}) of 5–6 kV and 3. 4 m cm^{2} are simultaneously derived on the SBDs with -Ga 2 O 3 epi-layer thickness of 10 m and diode radius of 90 m. Therefore, the Baliga’s power figure of merit (P-FOM = BV ^{2} /R ₎₍, ₒ₏) is yielded to be 7. 4-10. 6 GW / cm 2. To the best of all authors’ knowledge, those P-FOMs are the highest values among all types of SBDs, which is a significant step towards the Ga 2 O 3 SBD performance improvement. Combined with negligible forward hysteresis and low reverse leakage current, vertical -Ga 2 O 3 SBDs with state-of-the-art BV and P-FOM show its great promise for next generation high voltage and high power applications.