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We report the realization of field-plated vertical Ga 2 O 3 trench Schottky barrier diodes (SBDs). The trench SBDs show significantly lower leakage current than regular SBDs. With employment of field plate, a breakdown voltage (BV) of 2.89 kV is achieved, which is ~500 V higher than those without field plate. Trench sidewall depletion is observed, and the average depletion width is extracted using an analytical model. The trench SBDs have a differential specific on-resistance(Ron,sp) of 10.5(8.8) mQ ·cm 2 from DC (pulsed) measurements, which leads to a Baliga's figureof-merit (BV 2 /R on,sp ) of 0.80 (0.95) GW/cm 2 - the highest among Ga 2 O 3 power devices to date.
Li et al. (Thu,) studied this question.