A large energy storage density (ESD) of 30.4 J/cm 3 and high energy efficiency of 81.7% under an electrical field of 3 MV/cm was achieved at room temperature by the fabrication of environmentally friendly lead-free BaZr 0.2 Ti 0.8 O 3 epitaxial thin films on Nb-doped SrTiO 3 (001) substrates by using a radio-frequency magnetron sputtering system. Moreover, the BZT film capacitors exhibit great thermal stability of the ESD from 16.8 J/cm 3 to 14.0 J/cm 3 with efficiency of beyond 67.4% and high fatigue endurance (up to 10 6 cycles) in a wide temperature range from room temperature to 125 °C. Compared to other BaTiO 3 -based energy storage capacitor materials and even Pb-based systems, BaZr 0.2 Ti 0.8 O 3 thin film capacitors show either high ESD or great energy efficiency. All of these excellent results revealed that the BaZr 0.2 Ti 0.8 O 3 film capacitors have huge potential in the application of modern electronics, such as locomotive and pulse power, in harsh working environments.
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Sun et al. (2017) studied this question.
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